As a domain expert in semiconductor physics, I can provide you with a comprehensive explanation of the Zener breakdown phenomenon. The Zener breakdown, also known as the Zener Effect, is a critical concept in the operation of Zener diodes, which are specialized electronic components designed to operate in reverse bias conditions.

Zener diodes are engineered to have a very sharp and well-defined reverse breakdown voltage. This is achieved by introducing a heavily doped p-n junction with a very thin depletion region. When a reverse bias voltage is applied across the diode, the electric field within the depletion region increases. The Zener breakdown occurs when this electric field is strong enough to overcome the energy bandgap of the semiconductor material, allowing electrons to tunnel through the bandgap from the valence band to the conduction band.

This process is known as tunneling. It's a quantum mechanical phenomenon where particles can penetrate potential barriers that would be insurmountable according to classical physics. In the case of a Zener diode, the high electric field in the depletion region provides the necessary conditions for this tunneling to occur.

When the reverse bias voltage exceeds the breakdown voltage, a large number of free minority carriers are generated through this tunneling process. These carriers contribute to a significant increase in the reverse current, which is the hallmark of the Zener breakdown. This sudden increase in current is due to the avalanche multiplication effect, where the impact ionization process generates additional electron-hole pairs, further increasing the reverse current.

The Zener breakdown is a controlled and predictable process that is utilized in various applications, such as voltage regulation and reference voltage sources. It is distinct from the avalanche breakdown, which can occur in other types of diodes and is generally an undesired effect due to its uncontrollable nature and potential for device damage.

In summary, the Zener breakdown is a quantum tunneling effect that occurs in reverse-biased Zener diodes when the applied voltage exceeds the material's breakdown voltage, leading to a controlled increase in reverse current for specific applications.

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Also known as Zener Effect, is like a electrical breakdown condition in a zener diode due to the reverse bias voltage exceeding the breakdown voltage resulting in the tunnelling of electrons from the valence to the conduction band leading to a large number of free minority carriers that suddenly increases the reverse ...read more >>